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| MITSUBISHI THYRISTOR MODULES TM200DZ/CZ/PZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM200DZ/CZ/PZ-M,-H,-24,-2H * IT (AV) * VRRM * * * * Average on-state current .......... 200A Repetitive peak reverse voltage ........ 400/800/1200/1600V VDRM Repetitive peak off-state voltage ........ 400/800/1200/1600V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 (DZ Type) APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 3-6.5 4-M8 A1 K1 K2 A2 K2 G2 (DZ) CR1 A1 40 K2 G2 K2 A2 CR2 K1 G1 K1 20 K1 G1 6 18 30 68.5 16 32 18 30 68.5 150 16 (CZ) CR1 A1 K1 K2 Tab#110, t=0.5 (PZ) CR1 32 39 A1 K1 K2 CR2 A2 K1 G1 K2 G2 9 CR2 A2 K1 G1 K2 G2 (DZ Type) 7 23 LABEL (Bold line is connective bar.) Feb.1999 MITSUBISHI THYRISTOR MODULES TM200DZ/CZ/PZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class M 400 480 320 400 480 320 H 800 960 640 800 960 640 24 1200 1350 960 1200 1350 960 2H 1600 1700 1280 1600 1700 1280 Unit V V V V V V Symbol IT (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M8 Conditions Ratings 310 Unit A A A A2s A/s W W V V A C C V N*m kg*cm N*m kg*cm g Single-phase, half-wave 180 conduction, TC=64C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=1.0A, Tj=125C 200 4000 6.7 x 104 100 10 3.0 10 5.0 4.0 -40~+125 -40~+125 2500 8.83~10.8 90~110 1.96~3.92 20~40 300 -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM IDRM VTM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) -- Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Tj=125C, VRRM applied Tj=125C, VDRM applied Tj=125C, ITM=600A, instantaneous meas. Tj=125C, VD=2/3VDRM Tj=25C, VD=6V, RL=2 Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, RL=2 Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. -- -- -- 500 -- 0.25 15 -- -- 10 Typ. -- -- -- -- -- -- -- -- -- -- Max. 30 30 1.35 -- 3.0 -- 100 0.2 0.1 -- Unit mA mA V V/s V V mA C/ W C/ W M Feb.1999 MITSUBISHI THYRISTOR MODULES TM200DZ/CZ/PZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT 10 1 7 5 3 2 10 0 7 5 3 2 10 -1 0.5 SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) 10 2 7 5 3 2 4000 Tj=125C 3500 3000 2500 2000 1500 1000 500 1.0 1.5 2.0 2.5 0 1 23 5 7 10 20 30 50 70100 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 2 3 0.25 GATE CHARACTERISTICS VFGM=10V VGT=3.0V PG(AV)= 3.0W GATE VOLTAGE (V) 10 1 7 5 3 2 PGM=10W TRANSIENT THERMAL IMPEDANCE (C/W) 4 3 2 0.20 0.15 10 0 7 5 IGT= 100mA 3 2 10 -1 VGD=0.25V IFGM=4.0A 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE CURRENT (mA) Tj=25C 0.10 0.05 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -12 3 5 7 10 0 TIME (s) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) 320 AVERAGE ON-STATE POWER DISSIPATION (W) 130 180 120 90 60 CASE TEMPERATURE (C) 280 240 200 160 120 80 40 0 0 360 RESISTIVE, INDUCTIVE LOAD =30 120 110 100 90 80 70 60 PER SINGLE ELEMENT 360 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT =30 0 40 80 60 90 120 180 120 160 200 40 80 120 160 200 50 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM200DZ/CZ/PZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE 400 MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) DC 270 130 120 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) PER SINGLE ELEMENT 360 RESISTIVE, INDUCTIVE LOAD AVERAGE ON-STATE POWER DISSIPATION (W) 350 300 250 200 150 100 50 0 0 CASE TEMPERATURE (C) 360 180 RESISTIVE, 120 INDUCTIVE LOAD 90 60 =30 110 100 90 80 70 60 50 40 30 0 PER SINGLE ELEMENT 40 80 120 160 200 240 280 320 120 =30 60 90 180 40 270 DC 80 120 160 200 240 280 320 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 |
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